IRF1010ZPBF

IRF1010ZPBF

Data Sheet

Attribute
Description
Manufacturer Part Number
IRF1010ZPBF
Description
Transistor: N-MOSFET; unipolar; HEXFET; 55V; 94A;
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Rds On (Max) @ Id, Vgs 7.5 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 95nC @ 10V
Input Capacitance (Ciss) @ Vds 2840pF @ 25V
Power - Max 140W
Mounting Type Through Hole
Package / Case TO-220-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 7.5 mOhm @ 75A, 10V for MOSFET efficiency.

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