Attribute
Description
Manufacturer Part Number
STP11NK50Z
Manufacturer
Description
Transistor: N-MOSFET; unipolar; 500V; 10A; 125W; T
Note :
GST will not be applied to orders shipping outside of India
Stock: 344
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 132.75 | ₹ 132.75 |
Stock: 1
Distributor: 3
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 178.91 | ₹ 178.91 |
| 10 | ₹ 151.46 | ₹ 1,514.60 |
| 25 | ₹ 127.79 | ₹ 3,194.75 |
| 50 | ₹ 118.32 | ₹ 5,916.00 |
| 100 | ₹ 106.97 | ₹ 10,697.00 |
| 500 | ₹ 88.79 | ₹ 44,395.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 500V | |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) | |
| Rds On (Max) @ Id, Vgs | 520 mOhm @ 4.5A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA | |
| Gate Charge (Qg) @ Vgs | 68nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 1390pF @ 25V | |
| Power - Max | 125W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 520 mOhm @ 4.5A, 10V for MOSFET efficiency.
