Attribute
Description
Manufacturer Part Number
DTC114EET1G
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 24000
Distributor: 6
Traceability
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3000 | ₹ 1.39 | ₹ 4,170.00 |
| 21000 | ₹ 1.26 | ₹ 26,460.00 |
Stock: 34997
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 11.25 | ₹ 11.25 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | NPN - Pre-Biased | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA | |
| Current - Collector Cutoff (Max) | 500nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V | |
| Power - Max | 200mW | |
| Frequency - Transition | - | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-75, SOT-416 |
Description
Measures resistance at forward current 500nA for LED or diode evaluation. Offers a collector cutoff current rated at 500nA. Features a DC current gain hFE at Ic evaluated at 250mV @ 300µA, 10mA. Peak Vce(on) at Vge 100mA for transistor parameters.
