DTA114EET1G

DTA114EET1G
Attribute
Description
Manufacturer Part Number
DTA114EET1G
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
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Stock:
1

Distributor: 6

Traceability

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 1.48 ₹ 1.48
400 ₹ 1.47 ₹ 588.00

Stock:
36753

Distributor: 2

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 11.25 ₹ 11.25

Stock:
1

Distributor: 3

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 14.58 ₹ 14.58
50 ₹ 12.12 ₹ 606.00
100 ₹ 4.35 ₹ 435.00
250 ₹ 4.17 ₹ 1,042.50
500 ₹ 4.07 ₹ 2,035.00
1000 ₹ 1.89 ₹ 1,890.00

Product Attributes

Type Description
Category
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V
Power - Max 200mW
Frequency - Transition -
Mounting Type Surface Mount
Package / Case SC-75, SOT-416

Description

Measures resistance at forward current 500nA for LED or diode evaluation. Offers a collector cutoff current rated at 500nA. Features a DC current gain hFE at Ic evaluated at 250mV @ 300µA, 10mA. Peak Vce(on) at Vge 100mA for transistor parameters.

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