2N930
Data Sheet
Attribute
Description
Manufacturer Part Number
2N930
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
30mA,
45V
Note :
GST will not be applied to orders shipping outside of India
Stock: 121
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 731.25 | ₹ 731.25 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | 30mA | |
| Voltage - Collector Emitter Breakdown (Max) | 45V | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 500µA, 10mA | |
| Current - Collector Cutoff (Max) | 10µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10µA, 5V | |
| Power - Max | 300mW | |
| Frequency - Transition | - | |
| Mounting Type | - | |
| Package / Case | - |
Description
Measures resistance at forward current 10µA (ICBO) for LED or diode evaluation. Offers a collector cutoff current rated at 10µA (ICBO). Features a DC current gain hFE at Ic evaluated at 1V @ 500µA, 10mA. Peak Vce(on) at Vge 30mA for transistor parameters.
