Attribute
Description
Manufacturer Part Number
2N2219A
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
800mA,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 76
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 501.00 | ₹ 501.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | 800mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA | |
| Current - Collector Cutoff (Max) | 10µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10mV | |
| Power - Max | 800mW | |
| Frequency - Transition | 250MHz | |
| Mounting Type | Through Hole | |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
Description
Measures resistance at forward current 10µA (ICBO) for LED or diode evaluation. Offers a collector cutoff current rated at 10µA (ICBO). Features a DC current gain hFE at Ic evaluated at 1V @ 50mA, 500mA. Peak Vce(on) at Vge 800mA for transistor parameters.
