Attribute
Description
Manufacturer Part Number
PMBFJ177,215
Manufacturer
Description
PMBFJ174 Series 30 V 20 mA P-Ch silicon Field-effect Transis...
Note :
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Stock: 1
Distributor: 3
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 37.20 | ₹ 37.20 |
| 10 | ₹ 26.13 | ₹ 261.30 |
| 25 | ₹ 21.49 | ₹ 537.25 |
| 100 | ₹ 17.13 | ₹ 1,713.00 |
| 250 | ₹ 12.50 | ₹ 3,125.00 |
| 500 | ₹ 10.13 | ₹ 5,065.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | P-Channel | |
| Voltage - Breakdown (V(BR)GSS) | 30V | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Drain (Idss) @ Vds | 1.5mA @ 15V | |
| Current Drain (Id) | - | |
| Voltage - Cutoff (VGS off) @ Id | 800mV @ 10nA | |
| Power - Max | 300mW | |
| Input Capacitance (Ciss) @ Vds | 8pF @ 10V (VGS) | |
| Resistance - RDS(On) | 300 Ohm | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current P-Channel for LED or diode evaluation. Peak Rds(on) at Id 800mV @ 10nA for MOSFET efficiency.
