Attribute
Description
Manufacturer Part Number
PMBFJ113,215
Manufacturer
Description
PMBFJ113 Series Symmetrical Silicon N-Channel Field-Effect T...
Manufacturer Lead Time
18 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | N-Channel | |
| Voltage - Breakdown (V(BR)GSS) | 40V | |
| Drain to Source Voltage (Vdss) | 40V | |
| Current - Drain (Idss) @ Vds | 2mA @ 15V | |
| Current Drain (Id) | - | |
| Voltage - Cutoff (VGS off) @ Id | 3V @ 1µA | |
| Power - Max | 300mW | |
| Input Capacitance (Ciss) @ Vds | 6pF @ 10V (VGS) | |
| Resistance - RDS(On) | 100 Ohm | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current N-Channel for LED or diode evaluation. Peak Rds(on) at Id 3V @ 1µA for MOSFET efficiency.
