SIR800DP-T1-GE3

SIR800DP-T1-GE3
Attribute
Description
Manufacturer Part Number
SIR800DP-T1-GE3
Manufacturer
Description
MOSFET N-CH 20V 8-SOIC
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Rds On (Max) @ Id, Vgs 2.3 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) @ Vgs 133nC @ 10V
Input Capacitance (Ciss) @ Vds 5125pF @ 10V
Power - Max 69W
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 2.3 mOhm @ 15A, 10V for MOSFET efficiency.

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