SI7617DN-T1-GE3

SI7617DN-T1-GE3
Attribute
Description
Manufacturer Part Number
SI7617DN-T1-GE3
Manufacturer
Description
MOSFET, P CH, 30V, 35A,...
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Rds On (Max) @ Id, Vgs 12.3 mOhm @ 13.9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 59nC @ 10V
Input Capacitance (Ciss) @ Vds 1800pF @ 15V
Power - Max 52W
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8

Description

Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 12.3 mOhm @ 13.9A, 10V for MOSFET efficiency.

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