SI5935CDC-T1-GE3

SI5935CDC-T1-GE3

Data Sheet

Attribute
Description
Manufacturer Part Number
SI5935CDC-T1-GE3
Manufacturer
Description
MOSFET P-CH 20V 1206-8
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 4A
Rds On (Max) @ Id, Vgs 100 mOhm @ 3.1A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 11nC @ 5V
Input Capacitance (Ciss) @ Vds 455pF @ 10V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead

Description

Measures resistance at forward current 2 P-Channel (Dual) for LED or diode evaluation. Peak Rds(on) at Id 100 mOhm @ 3.1A, 4.5V for MOSFET efficiency.

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