SI5513DC-T1-E3
Data Sheet
Attribute
Description
Manufacturer Part Number
SI5513DC-T1-E3
Manufacturer
Description
MOSFET,
DUAL,
NP,
8-1206; Transistor Polarity:N and P Channe...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | N and P-Channel | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 3.1A, 2.1A | |
| Rds On (Max) @ Id, Vgs | 75 mOhm @ 3.1A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 6nC @ 4.5V | |
| Input Capacitance (Ciss) @ Vds | - | |
| Power - Max | 1.1W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SMD, Flat Lead |
Description
Measures resistance at forward current N and P-Channel for LED or diode evaluation. Peak Rds(on) at Id 75 mOhm @ 3.1A, 4.5V for MOSFET efficiency.
