SI4276DY-T1-GE3

SI4276DY-T1-GE3
Attribute
Description
Manufacturer Part Number
SI4276DY-T1-GE3
Manufacturer
Description
MOSFET N-CH 30V 8-SOIC
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8A
Rds On (Max) @ Id, Vgs 15.3 mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 26nC @ 10V
Input Capacitance (Ciss) @ Vds 1000pF @ 15V
Power - Max 3.6W, 2.8W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)

Description

Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Peak Rds(on) at Id 15.3 mOhm @ 9.5A, 10V for MOSFET efficiency.

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