SI3421DV-T1-GE3

SI3421DV-T1-GE3
Attribute
Description
Manufacturer Part Number
SI3421DV-T1-GE3
Manufacturer
Description
MOSFET P-CH 30V D-S TSOP-6
Manufacturer Lead Time
Not specified

Our team will assist you shortly.

Product Attributes

Type Description
Category
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8.3A (Ta)
Rds On (Max) @ Id, Vgs 19.2 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 69nC @ 10V
Input Capacitance (Ciss) @ Vds 2580pF @ 15V
Power - Max 2W
Mounting Type -
Package / Case -

Description

Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 19.2 mOhm @ 7A, 10V for MOSFET efficiency.

Stay Up to Date

Subscribe to our newsletter to receiveour weekly feed.