SI2337DS-T1-GE3

SI2337DS-T1-GE3
Attribute
Description
Manufacturer Part Number
SI2337DS-T1-GE3
Manufacturer
Description
MOSFET P-CH 80V 2.2A SOT23-3
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 1.2A (Ta), 2.2A (Tc)
Rds On (Max) @ Id, Vgs 270 mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 17nC @ 10V
Input Capacitance (Ciss) @ Vds 500pF @ 40V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3

Description

Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 270 mOhm @ 1.2A, 10V for MOSFET efficiency.

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