SI2329DS-T1-GE3

SI2329DS-T1-GE3
Attribute
Description
Manufacturer Part Number
SI2329DS-T1-GE3
Manufacturer
Description
MOSFET P-CH 8V SOT-23
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 5.3A (Ta)
Rds On (Max) @ Id, Vgs 30 mOhm @ 5.3A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) @ Vgs 29nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1485pF @ 4V
Power - Max 1.25W
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3

Description

Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 30 mOhm @ 5.3A, 4.5V for MOSFET efficiency.

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