SI2323DS-T1-GE3
Data Sheet
Attribute
Description
Manufacturer Part Number
SI2323DS-T1-GE3
Manufacturer
Description
MOSFET,
P CH,
20V,
4.7A,...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET P-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) | |
| Rds On (Max) @ Id, Vgs | 39 mOhm @ 4.7A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 19nC @ 4.5V | |
| Input Capacitance (Ciss) @ Vds | 1020pF @ 10V | |
| Power - Max | 750mW | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 39 mOhm @ 4.7A, 4.5V for MOSFET efficiency.
