SI1553DL-T1-GE3

SI1553DL-T1-GE3

Data Sheet

Attribute
Description
Manufacturer Part Number
SI1553DL-T1-GE3
Manufacturer
Description
MOSFET, NP CH, 20V, W DIODE,...
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 660mA, 410mA
Rds On (Max) @ Id, Vgs 385 mOhm @ 660mA, 4.5V
Vgs(th) (Max) @ Id 600mV @ 250µA
Gate Charge (Qg) @ Vgs 1.2nC @ 4.5V
Input Capacitance (Ciss) @ Vds -
Power - Max 270mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363

Description

Measures resistance at forward current N and P-Channel for LED or diode evaluation. Peak Rds(on) at Id 385 mOhm @ 660mA, 4.5V for MOSFET efficiency.

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