TK35N65W,S1F

TK35N65W,S1F

Data Sheet

Attribute
Description
Manufacturer Part Number
TK35N65W,S1F
Manufacturer
Description
MOSFET N-CH 650V 35A TO-247
Manufacturer Lead Time
Not specified

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 35A (Ta)
Rds On (Max) @ Id, Vgs 80 mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 2.1mA
Gate Charge (Qg) @ Vgs 100nC @ 10V
Input Capacitance (Ciss) @ Vds 4100pF @ 300V
Power - Max 270W
Mounting Type Through Hole
Package / Case TO-247-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 80 mOhm @ 17.5A, 10V for MOSFET efficiency.

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