IPP65R600C6

IPP65R600C6
Attribute
Description
Manufacturer Part Number
IPP65R600C6
Description
MOSFET N-CH 650V 7.3A TO220
Manufacturer Lead Time
6 weeks

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 7.3A (Tc)
Rds On (Max) @ Id, Vgs 600 mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 210µA
Gate Charge (Qg) @ Vgs 23nC @ 10V
Input Capacitance (Ciss) @ Vds 440pF @ 100V
Power - Max 63W
Mounting Type Through Hole
Package / Case TO-220-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 600 mOhm @ 2.1A, 10V for MOSFET efficiency.

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