IXTY3N50P
Data Sheet
Attribute
Description
Note :
GST will not be applied to orders shipping outside of India
Stock: 137
Distributor: 11
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 107.91 | ₹ 107.91 |
| 3 | ₹ 92.77 | ₹ 278.31 |
| 10 | ₹ 73.83 | ₹ 738.30 |
| 30 | ₹ 66.26 | ₹ 1,987.80 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 500V | |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) | |
| Rds On (Max) @ Id, Vgs | 2 Ohm @ 1.8A, 10V | |
| Vgs(th) (Max) @ Id | 5.5V @ 50µA | |
| Gate Charge (Qg) @ Vgs | 9.3nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 409pF @ 25V | |
| Power - Max | 70W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 2 Ohm @ 1.8A, 10V for MOSFET efficiency.
