IXTQ52N30P
Data Sheet
Attribute
Description
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Stock: 115
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 380.25 | ₹ 380.25 |
Stock: 3
Distributor: 11
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 1,030.85 | ₹ 1,030.85 |
| 3 | ₹ 887.91 | ₹ 2,663.73 |
| 10 | ₹ 712.79 | ₹ 7,127.90 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 300V | |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) | |
| Rds On (Max) @ Id, Vgs | 66 mOhm @ 26A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 3490pF @ 25V | |
| Power - Max | 400W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 66 mOhm @ 26A, 10V for MOSFET efficiency.
