IXTK32P60P
Data Sheet
Attribute
Description
Note :
GST will not be applied to orders shipping outside of India
Stock: 1
Distributor: 11
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 2,072.11 | ₹ 2,072.11 |
| 3 | ₹ 1,861.96 | ₹ 5,585.88 |
| 10 | ₹ 1,650.87 | ₹ 16,508.70 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET P-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) | |
| Rds On (Max) @ Id, Vgs | 350 mOhm @ 16A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) @ Vgs | 196nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 11100pF @ 25V | |
| Power - Max | 890W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-264-3, TO-264AA |
Description
Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 350 mOhm @ 16A, 10V for MOSFET efficiency.
