IXFR80N50Q3
Data Sheet
Attribute
Description
Manufacturer Part Number
IXFR80N50Q3
Manufacturer
Description
Single N-Channel 500 V 570 W 200 nC Through Hole Power Mosfe...
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Stock: 11
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 1,821.75 | ₹ 1,821.75 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 500V | |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | |
| Rds On (Max) @ Id, Vgs | 72 mOhm @ 40A, 10V | |
| Vgs(th) (Max) @ Id | 6.5V @ 8mA | |
| Gate Charge (Qg) @ Vgs | 200nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 10000pF @ 25V | |
| Power - Max | 570W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 72 mOhm @ 40A, 10V for MOSFET efficiency.
