IXFN62N80Q3
Data Sheet
Attribute
Description
Manufacturer Part Number
IXFN62N80Q3
Manufacturer
Description
N-Channel 800 V 140 mOhm 270 nC HyperFET Power MosFet - SOT2...
Note :
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Stock: 1000
Distributor: 12
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100 | ₹ 2,900.65 | ₹ 2,90,065.00 |
Stock: 10
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 3,237.75 | ₹ 3,237.75 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 800V | |
| Current - Continuous Drain (Id) @ 25°C | 49A | |
| Rds On (Max) @ Id, Vgs | 140 mOhm @ 31A, 10V | |
| Vgs(th) (Max) @ Id | 6.5V @ 8mA | |
| Gate Charge (Qg) @ Vgs | 270nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 13600pF @ 25V | |
| Power - Max | 960W | |
| Mounting Type | Chassis Mount | |
| Package / Case | SOT-227-4, miniBLOC |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 140 mOhm @ 31A, 10V for MOSFET efficiency.


