IXFH6N100
Data Sheet
Attribute
Description
Manufacturer Part Number
IXFH6N100
Manufacturer
Description
Transistor: N-MOSFET; unipolar; 1kV; 6A; 180W; TO2
Note :
GST will not be applied to orders shipping outside of India
Stock: 9
Distributor: 11
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 1,401.91 | ₹ 1,401.91 |
| 3 | ₹ 1,242.89 | ₹ 3,728.67 |
| 10 | ₹ 995.82 | ₹ 9,958.20 |
| 25 | ₹ 889.80 | ₹ 22,245.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 1000V (1kV) | |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) | |
| Rds On (Max) @ Id, Vgs | 2 Ohm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 2.5mA | |
| Gate Charge (Qg) @ Vgs | 130nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 2600pF @ 25V | |
| Power - Max | 180W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 2 Ohm @ 500mA, 10V for MOSFET efficiency.
