IXFH22N50P
Data Sheet
Attribute
Description
Manufacturer Part Number
IXFH22N50P
Manufacturer
Description
Single N-Channel 500 V 350 W 50 nC Through Hole Power Mosfet...
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Stock: 142
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 345.75 | ₹ 345.75 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 500V | |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) | |
| Rds On (Max) @ Id, Vgs | 270 mOhm @ 11A, 10V | |
| Vgs(th) (Max) @ Id | 5.5V @ 2.5mA | |
| Gate Charge (Qg) @ Vgs | 50nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 2630pF @ 25V | |
| Power - Max | 350W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 270 mOhm @ 11A, 10V for MOSFET efficiency.
