IRF7799L2TR1PBF
Data Sheet
Attribute
Description
Manufacturer Part Number
IRF7799L2TR1PBF
Manufacturer
Description
Transistor: N-MOSFET; unipolar; HEXFET; 250V; 35A;
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 250V | |
| Current - Continuous Drain (Id) @ 25°C | 375A (Tc) | |
| Rds On (Max) @ Id, Vgs | 38 mOhm @ 21A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 165nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 6714pF @ 25V | |
| Power - Max | 4.3W | |
| Mounting Type | Surface Mount | |
| Package / Case | - |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 38 mOhm @ 21A, 10V for MOSFET efficiency.
