IPW65R420CFD

IPW65R420CFD

Data Sheet

Attribute
Description
Manufacturer Part Number
IPW65R420CFD
Description
MOSFET N-CH 650V 8.7A TO247
Manufacturer Lead Time
6 weeks

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 8.7A (Tc)
Rds On (Max) @ Id, Vgs 420 mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 340µA
Gate Charge (Qg) @ Vgs 32nC @ 10V
Input Capacitance (Ciss) @ Vds 870pF @ 100V
Power - Max 83.3W
Mounting Type Through Hole
Package / Case TO-247-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 420 mOhm @ 3.4A, 10V for MOSFET efficiency.

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