Attribute
Description
Manufacturer Part Number
IPW65R190E6
Manufacturer
Description
MOSFET N-CH 650V 20.2A TO247
Manufacturer Lead Time
6 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) | |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 7.3A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 730µA | |
| Gate Charge (Qg) @ Vgs | 73nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 1620pF @ 100V | |
| Power - Max | 151W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 190 mOhm @ 7.3A, 10V for MOSFET efficiency.
