IPW60R125CP

IPW60R125CP
Attribute
Description
Manufacturer Part Number
IPW60R125CP
Description
MOSFET, N-CH, 650V, 25A,...
Manufacturer Lead Time
6 weeks

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Rds On (Max) @ Id, Vgs 125 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1.1mA
Gate Charge (Qg) @ Vgs 70nC @ 10V
Input Capacitance (Ciss) @ Vds 2500pF @ 100V
Power - Max 208W
Mounting Type Through Hole
Package / Case TO-247-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 125 mOhm @ 16A, 10V for MOSFET efficiency.

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