IPP60R165CP

IPP60R165CP
Attribute
Description
Manufacturer Part Number
IPP60R165CP
Description
MOSFET N-CH 600V 21A TO-220
Manufacturer Lead Time
6 weeks

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Rds On (Max) @ Id, Vgs 165 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 3.5V @ 790µA
Gate Charge (Qg) @ Vgs 52nC @ 10V
Input Capacitance (Ciss) @ Vds 2000pF @ 100V
Power - Max 192W
Mounting Type Through Hole
Package / Case TO-220-3

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 165 mOhm @ 12A, 10V for MOSFET efficiency.

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