IPI110N20N3 G

IPI110N20N3 G
Attribute
Description
Manufacturer Part Number
IPI110N20N3 G
Description
MOSFET N-CH 200V 88A TO262-3
Manufacturer Lead Time
6 weeks

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Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 88A (Tc)
Rds On (Max) @ Id, Vgs 11 mOhm @ 88A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA
Gate Charge (Qg) @ Vgs 87nC @ 10V
Input Capacitance (Ciss) @ Vds 7100pF @ 100V
Power - Max 300W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 11 mOhm @ 88A, 10V for MOSFET efficiency.

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