IPI076N12N3 G

IPI076N12N3 G
Attribute
Description
Manufacturer Part Number
IPI076N12N3 G
Description
MOSFET N-CH 120V 100A TO262-3
Manufacturer Lead Time
6 weeks

Our team will assist you shortly.

Product Attributes

Type Description
Category
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 120V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Rds On (Max) @ Id, Vgs 7.6 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 130µA
Gate Charge (Qg) @ Vgs 101nC @ 10V
Input Capacitance (Ciss) @ Vds 6640pF @ 60V
Power - Max 188W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

Description

Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 7.6 mOhm @ 100A, 10V for MOSFET efficiency.

Stay Up to Date

Subscribe to our newsletter to receiveour weekly feed.