IPA65R660CFD
Data Sheet
Attribute
Description
Manufacturer Part Number
IPA65R660CFD
Manufacturer
Description
MOSFET N-CH 650V 6.0A TO220
Manufacturer Lead Time
6 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) | |
| Rds On (Max) @ Id, Vgs | 660 mOhm @ 2.1A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA | |
| Gate Charge (Qg) @ Vgs | 22nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 615pF @ 100V | |
| Power - Max | 27.8W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 660 mOhm @ 2.1A, 10V for MOSFET efficiency.
