Attribute
Description
Manufacturer Part Number
STF11NM65N
Manufacturer
Description
STF11NM65N Series N-Channel 650 V 0.38 Ohm MDmesh? Power MOS...
Note :
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Stock: 5
Distributor: 6
Traceability
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 5 | ₹ 302.91 | ₹ 1,514.55 |
| 30 | ₹ 273.57 | ₹ 8,207.10 |
| 100 | ₹ 234.76 | ₹ 23,476.00 |
| 200 | ₹ 216.77 | ₹ 43,354.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) | |
| Rds On (Max) @ Id, Vgs | 455 mOhm @ 5.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 29nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 800pF @ 50V | |
| Power - Max | 25W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 455 mOhm @ 5.5A, 10V for MOSFET efficiency.
