Attribute
Description
Manufacturer Part Number
FQB55N10TM
Manufacturer
Description
N CHANNEL MOSFET,
100V,
55mA; Transistor; N CHANNEL MOSFET,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 238
Distributor: 3
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 106.97 | ₹ 106.97 |
| 10 | ₹ 97.50 | ₹ 975.00 |
| 100 | ₹ 89.93 | ₹ 8,993.00 |
| 500 | ₹ 89.93 | ₹ 44,965.00 |
Stock: 3090
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 135.75 | ₹ 135.75 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 55A (Tc) | |
| Rds On (Max) @ Id, Vgs | 26 mOhm @ 27.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 98nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 2730pF @ 25V | |
| Power - Max | 3.75W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 26 mOhm @ 27.5A, 10V for MOSFET efficiency.
