FQB47P06TM_AM002

FQB47P06TM_AM002
Attribute
Description
Manufacturer Part Number
FQB47P06TM_AM002
Description
MOSFET, P, SMD, TO-263; Transistor Polarity:P Channel; Conti...
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Stock:
1288

Distributor: 2

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 173.25 ₹ 173.25

Stock:
837

Distributor: 3

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 224.34 ₹ 224.34
10 ₹ 185.53 ₹ 1,855.30
100 ₹ 148.62 ₹ 14,862.00
500 ₹ 130.63 ₹ 65,315.00
1000 ₹ 107.91 ₹ 1,07,910.00

Product Attributes

Type Description
Category
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 47A
Rds On (Max) @ Id, Vgs 26 mOhm @ 23.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 110nC @ 10V
Input Capacitance (Ciss) @ Vds 3600pF @ 25V
Power - Max 3.75W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Description

Measures resistance at forward current MOSFET P-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 26 mOhm @ 23.5A, 10V for MOSFET efficiency.

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