Attribute
Description
Manufacturer Part Number
FDS6900AS
Manufacturer
Description
Transistor: N-MOSFET x2; unipolar; 30V; 6.9A; 1.6W
Note :
GST will not be applied to orders shipping outside of India
Stock: 2424
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 93.75 | ₹ 93.75 |
Stock: 1
Distributor: 3
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 125.90 | ₹ 125.90 |
| 10 | ₹ 97.50 | ₹ 975.00 |
| 100 | ₹ 75.54 | ₹ 7,554.00 |
| 1000 | ₹ 50.36 | ₹ 50,360.00 |
| 2000 | ₹ 49.98 | ₹ 99,960.00 |
| 10000 | ₹ 47.14 | ₹ 4,71,400.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | 2 N-Channel (Dual) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 6.9A, 8.2A | |
| Rds On (Max) @ Id, Vgs | 27 mOhm @ 6.9A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 15nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 600pF @ 15V | |
| Power - Max | 900mW | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Description
Measures resistance at forward current 2 N-Channel (Dual) for LED or diode evaluation. Peak Rds(on) at Id 27 mOhm @ 6.9A, 10V for MOSFET efficiency.
