FDB8832
Data Sheet
Attribute
Description
Manufacturer Part Number
FDB8832
Manufacturer
Description
MOSFET,
N,
SMD,
TO-263; Transistor Polarity:N Channel; Conti...
Note :
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Stock: 1
Distributor: 3
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 134.42 | ₹ 134.42 |
| 800 | ₹ 133.47 | ₹ 1,06,776.00 |
| 2400 | ₹ 121.16 | ₹ 2,90,784.00 |
| 9600 | ₹ 117.38 | ₹ 11,26,848.00 |
Stock: 2607
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 218.25 | ₹ 218.25 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| FET Type | MOSFET N-Channel, Metal Oxide | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 34A (Ta), 80A (Tc) | |
| Rds On (Max) @ Id, Vgs | 1.9 mOhm @ 80A, 10V | |
| Vgs(th) (Max) @ Id | 3V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 265nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 11400pF @ 15V | |
| Power - Max | 300W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Description
Measures resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode evaluation. Peak Rds(on) at Id 1.9 mOhm @ 80A, 10V for MOSFET efficiency.
