Attribute
Description
Manufacturer Part Number
STD845DN40
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
2 NPN (Dual),...
Note :
GST will not be applied to orders shipping outside of India
Stock: 2000
Distributor: 6
Traceability
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 2000 | ₹ 38.81 | ₹ 77,620.00 |
Stock: 440
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 73.50 | ₹ 73.50 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | 2 NPN (Dual) | |
| Current - Collector (Ic) (Max) | 4A | |
| Voltage - Collector Emitter Breakdown (Max) | 400V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1A, 4A | |
| Current - Collector Cutoff (Max) | 250µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 12 @ 2A, 5V | |
| Power - Max | 3W | |
| Frequency - Transition | - | |
| Mounting Type | Through Hole | |
| Package / Case | 8-DIP (0.300", 7.62mm) |
Description
Measures resistance at forward current 250µA for LED or diode evaluation. Offers a collector cutoff current rated at 250µA. Features a DC current gain hFE at Ic evaluated at 500mV @ 1A, 4A. Peak Vce(on) at Vge 4A for transistor parameters.
