Attribute
Description
Manufacturer Part Number
2N5657
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
500mA,...
Note :
GST will not be applied to orders shipping outside of India
Stock: 4468
Distributor: 2
Lead Time: Not specified
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 72.00 | ₹ 72.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 350V | |
| Vce Saturation (Max) @ Ib, Ic | 10V @ 100mA, 500mA | |
| Current - Collector Cutoff (Max) | 100µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 100mA, 10V | |
| Power - Max | 20W | |
| Frequency - Transition | 10MHz | |
| Mounting Type | Through Hole | |
| Package / Case | TO-225AA, TO-126-3 |
Description
Measures resistance at forward current 100µA for LED or diode evaluation. Offers a collector cutoff current rated at 100µA. Features a DC current gain hFE at Ic evaluated at 10V @ 100mA, 500mA. Peak Vce(on) at Vge 500mA for transistor parameters.
