MUN2211T1G

MUN2211T1G
Attribute
Description
Manufacturer Part Number
MUN2211T1G
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Note : GST will not be applied to orders shipping outside of India

Stock:
3000

Distributor: 6

Traceability

Lead Time: Not specified

Quantity Unit Price Ext. Price
3000 ₹ 1.53 ₹ 4,590.00
18000 ₹ 1.40 ₹ 25,200.00

Stock:
40377

Distributor: 2

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 11.25 ₹ 11.25

Stock:
28712

Distributor: 3

Lead Time: Not specified


Quantity Unit Price Ext. Price
1 ₹ 14.77 ₹ 14.77
10 ₹ 13.35 ₹ 133.50
100 ₹ 4.73 ₹ 473.00
1000 ₹ 3.22 ₹ 3,220.00

Stock:
8224

Distributor: 11

Lead Time: Not specified


Quantity Unit Price Ext. Price
25 ₹ 2,481.99 ₹ 62,049.75
100 ₹ 1,728.49 ₹ 1,72,849.00
500 ₹ 1,384.88 ₹ 6,92,440.00
3000 ₹ 1,252.35 ₹ 37,57,050.00
12000 ₹ 1,163.37 ₹ 1,39,60,440.00

Product Attributes

Type Description
Category
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V
Power - Max 338mW
Frequency - Transition -
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3

Description

Measures resistance at forward current 500nA for LED or diode evaluation. Offers a collector cutoff current rated at 500nA. Features a DC current gain hFE at Ic evaluated at 250mV @ 300µA, 10mA. Peak Vce(on) at Vge 100mA for transistor parameters.

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