Attribute
Description
Manufacturer Part Number
2N6427
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | NPN - Darlington | |
| Current - Collector (Ic) (Max) | 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 40V | |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500µA, 500mA | |
| Current - Collector Cutoff (Max) | 1µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V | |
| Power - Max | 625mW | |
| Frequency - Transition | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Description
Measures resistance at forward current 1µA for LED or diode evaluation. Offers a collector cutoff current rated at 1µA. Features a DC current gain hFE at Ic evaluated at 1.5V @ 500µA, 500mA. Peak Vce(on) at Vge 500mA for transistor parameters.
