JANTXV2N3811L
Data Sheet
Attribute
Description
Manufacturer Part Number
JANTXV2N3811L
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
2 PNP (Dual),...
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | 2 PNP (Dual) | |
| Current - Collector (Ic) (Max) | 50mA | |
| Voltage - Collector Emitter Breakdown (Max) | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 100µA, 1mA | |
| Current - Collector Cutoff (Max) | 10µA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V | |
| Power - Max | 350mW | |
| Frequency - Transition | - | |
| Mounting Type | - | |
| Package / Case | - |
Description
Measures resistance at forward current 10µA (ICBO) for LED or diode evaluation. Offers a collector cutoff current rated at 10µA (ICBO). Features a DC current gain hFE at Ic evaluated at 250mV @ 100µA, 1mA. Peak Vce(on) at Vge 50mA for transistor parameters.
