JANTXV2N2605
Data Sheet
Attribute
Description
Manufacturer Part Number
JANTXV2N2605
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
30mA,
60V
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | 30mA | |
| Voltage - Collector Emitter Breakdown (Max) | 60V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V | |
| Power - Max | 400mW | |
| Frequency - Transition | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
Description
Measures resistance at forward current 100nA (ICBO) for LED or diode evaluation. Offers a collector cutoff current rated at 100nA (ICBO). Features a DC current gain hFE at Ic evaluated at 300mV @ 500µA, 10mA. Peak Vce(on) at Vge 30mA for transistor parameters.
