Attribute
Description
Manufacturer Part Number
JAN2N3019
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
1A,
80V
Manufacturer Lead Time
Not specified
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Type | NPN | |
| Current - Collector (Ic) (Max) | 1A | |
| Voltage - Collector Emitter Breakdown (Max) | 80V | |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA | |
| Current - Collector Cutoff (Max) | 100nA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 10V | |
| Power - Max | 800mW | |
| Frequency - Transition | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
Description
Measures resistance at forward current 100nA for LED or diode evaluation. Offers a collector cutoff current rated at 100nA. Features a DC current gain hFE at Ic evaluated at 500mV @ 50mA, 500mA. Peak Vce(on) at Vge 1A for transistor parameters.
