MMDT2222V-TP

MMDT2222V-TP

Data Sheet

Attribute
Description
Manufacturer Part Number
MMDT2222V-TP
Description
Transistors - Bipolar (BJT) -Single & Arrays, 2 NPN (Dual),...
Manufacturer Lead Time
Not specified

Our team will assist you shortly.

Product Attributes

Type Description
Category
Transistor Type 2 NPN (Dual)
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 150mW
Frequency - Transition 300MHz
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666

Description

Features a DC current gain hFE at Ic evaluated at 1V @ 50mA, 500mA. Peak Vce(on) at Vge 600mA for transistor parameters.

Stay Up to Date

Subscribe to our newsletter to receiveour weekly feed.