MMBT5401-G

MMBT5401-G
Attribute
Description
Manufacturer Part Number
MMBT5401-G
Description
Transistors - Bipolar (BJT) -Single & Arrays, NPN, 600mA,...
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Stock:
1908

Distributor: 2

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 30.75 ₹ 30.75

Product Attributes

Type Description
Category
Transistor Type NPN
Current - Collector (Ic) (Max) 600mA
Voltage - Collector Emitter Breakdown (Max) 150V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
Power - Max 300mW
Frequency - Transition 100MHz
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3

Description

Features a DC current gain hFE at Ic evaluated at 500mV @ 5mA, 50mA. Peak Vce(on) at Vge 600mA for transistor parameters.

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