2N3906-G

2N3906-G
Attribute
Description
Manufacturer Part Number
2N3906-G
Description
Transistors - Bipolar (BJT) -Single & Arrays, PNP, 200mA,...
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Stock:
10837

Distributor: 2

Lead Time: Not specified

Quantity Unit Price Ext. Price
1 ₹ 24.00 ₹ 24.00

Product Attributes

Type Description
Category
Transistor Type PNP
Current - Collector (Ic) (Max) 200mA
Voltage - Collector Emitter Breakdown (Max) 40V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 100mA, 1V
Power - Max -
Frequency - Transition 250MHz
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)

Description

Features a DC current gain hFE at Ic evaluated at 400mV @ 5mA, 50mA. Peak Vce(on) at Vge 200mA for transistor parameters.

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